TPC5658NND03
View detailed images (1)

TPC5658NND03

SKU: TPC5658NND03
TPC5658NND03 Transistor Silicon NPN CASE: WBFBP-03B MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case WBFBP-03B
Manufacturer Toshiba
Polarity NPN
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 0.15 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3.5 pF
Transition Frequency (ft): 180 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SMD Transistor Code BQ_BR_BS
SKU 1442162
Back