The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
UMD6N

UMD6N

SKU: UMD6N
UMD6N Transistor Silicon Pre-Biased-NPN - PNP CASE: SOT363 MAKE: Rohm Semiconductor
Product specifications
Type Transistor Silicon Pre-Biased-NPN - PNP
Case SOT363
Manufacturer Rohm Semiconductor
Polarity Pre-Biased-NPN*PNP
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SMD Transistor Code D6
Built in Bias Resistor R1 4.7 kOhm
SKU 567425
Back