UMG1N
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UMG1N

SKU: UMG1N
UMG1N Transistor Silicon Pre-Biased-NPN CASE: SOT353 MAKE: Rohm Semiconductor
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT353
Manufacturer Rohm Semiconductor
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN 56
SMD Transistor Code G1
Built in Bias Resistor R1 22 kOhm
Built in Bias Resistor R2 22 kOhm
Typical Resistor Ratio R1/R2 1
SKU 567427
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