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UMG6N
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UMG6N

SKU: UMG6N
UMG6N Transistor Silicon Pre-Biased-NPN CASE: SOT353 MAKE: Rohm Semiconductor
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT353
Manufacturer Rohm Semiconductor
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SMD Transistor Code G6
Built in Bias Resistor R1 47 kOhm
SKU 567431
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