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UMG8N
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UMG8N

SKU: UMG8N
UMG8N Transistor Silicon Pre-Biased-NPN CASE: SOT353 MAKE: Rohm Semiconductor
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT353
Manufacturer Rohm Semiconductor
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN 68
SMD Transistor Code G8
Built in Bias Resistor R1 4.7 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 0.1
SKU 567433
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