UMH2N
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UMH2N

SKU: UMH2N
UMH2N Transistor Silicon Pre-Biased-NPN CASE: SOT363 MAKE: Rohm Semiconductor
Datasheet
UMH2N Datasheet
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT363
Manufacturer Rohm Semiconductor
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN 68
SMD Transistor Code H2
Built in Bias Resistor R1 47 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 1
SKU 365301
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