The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
UN1116S
View detailed images (1)

UN1116S

SKU: UN1116S
UN1116S Transistor Silicon PNP CASE: M-A1 MAKE: Panasonic
Product specifications
Type Transistor Silicon PNP
Case M-A1
Manufacturer Panasonic
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.4 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN 290
Built in Bias Resistor R1 4.7 kOhm
SKU 1442432
Back