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UN111D
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UN111D

SKU: UN111D
UN111D Transistor Silicon PNP CASE: M-A1 MAKE: Matsushita Electronics
Datasheet
UN111D Datasheet
Product specifications
Type Transistor Silicon PNP
Case M-A1
Manufacturer Matsushita Electronics
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.4 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN 30
Built in Bias Resistor R1 47 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 4.7
SKU 365313
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