UN112X
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UN112X

SKU: UN112X
UN112X Transistor Silicon PNP CASE: M-A1 MAKE: Matsushita Electronics
Datasheet
UN112X Datasheet
Product specifications
Type Transistor Silicon PNP
Case M-A1
Manufacturer Matsushita Electronics
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.6 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 20
Built in Bias Resistor R1 0.27 kOhm
Built in Bias Resistor R2 5 kOhm
Typical Resistor Ratio R1/R2 0.054
SKU 365322
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