UN1223
View detailed images (1)

UN1223

SKU: UN1223
UN1223 Transistor Silicon Pre-Biased-NPN CASE: M-A1 MAKE: Matsushita Electronics
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case M-A1
Manufacturer Matsushita Electronics
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.6 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 60
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 1
SKU 633900
Back