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UN211Z
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UN211Z

SKU: UN211Z
UN211Z Transistor Silicon NPN CASE: SOT23 MAKE: Matsushita Electronics
Datasheet
UN211Z Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT23
Manufacturer Matsushita Electronics
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SMD Transistor Code FE
Built in Bias Resistor R1 4.7 kOhm
Built in Bias Resistor R2 22 kOhm
Typical Resistor Ratio R1/R2 0.21
SKU 365358
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