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UN221F
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UN221F

SKU: UN221F
UN221F Transistor Silicon NPN CASE: SOT23 MAKE: Matsushita Electronics
Datasheet
UN221F Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT23
Manufacturer Matsushita Electronics
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SMD Transistor Code 8O
Built in Bias Resistor R1 4.7 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 0.47
SKU 365377
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