UN2222
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UN2222

SKU: UN2222
UN2222 Transistor Silicon NPN CASE: SOT23 MAKE: Matsushita Electronics
Product specifications
Type Transistor Silicon NPN
Case SOT23
Manufacturer Matsushita Electronics
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SMD Transistor Code 9B
Built in Bias Resistor R1 4.7 kOhm
Built in Bias Resistor R2 4.7 kOhm
Typical Resistor Ratio R1/R2 1
SKU 550083
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