UN411E
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UN411E

SKU: UN411E
UN411E Transistor Silicon PNP CASE: TO92S MAKE: Generic
Datasheet
UN411E Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO92S
Manufacturer Generic
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN 60
Built in Bias Resistor R1 47 kOhm
Built in Bias Resistor R2 22 kOhm
Typical Resistor Ratio R1/R2 2.1
SKU 365396
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