Weight |
0.01 kg
|
Type |
Transistor N Channel Silicon |
Manufacturer |
Matsushita Electronics |
Case |
SOT323 |
Equivalent |
UN5214-SMD |
Polarity |
Pre-Biased-NPN |
Maximum Collector Power Dissipation (Pc) |
0.15 W |
Maximum Collector-Base Voltage |Vcb| |
50 V |
Maximum Collector-Emitter Voltage |Vce| |
50 V |
Maximum Collector Current |Ic max| |
0.1 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Transition Frequency (ft): |
150 MHz |
Forward Current Transfer Ratio (hFE), MIN |
80 |
SMD Transistor Code |
8D |
Built in Bias Resistor R1 |
10 kOhm |
Built in Bias Resistor R2 |
47 kOhm |
Typical Resistor Ratio R1/R2 |
0.21 |
SKU |
633875 |