| Type | Transistor Silicon PNP | |
| Case | TO18 | |
| Manufacturer | ST Microelectronics - STM | |
| Vbr CBO | 12 | |
| Vbr CEO | 12 | |
| Max. PD (W) | 300m | |
| C(ob) (F) | 6.0p | |
| Derate (Amb) (W/°C) | 2.0m | |
| t(f) Max. (S) | 110n+ | |
| hfe | 35 | |
| Icbo Max. @Vcb Max. (A) | 100n | |
| Polarity | PNP | |
| Tr Max. (s) | 80n | |
| Trans. Freq (Hz) Min. | 550M | |
| @VCE (test) (V) | 2.0 | |
| Oper. Temp (°C) Max. | 175 | |
| @Ic (A) | 5.0m | |
| Pinout Equivalence Number | N/A | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 0.3 W | |
| Maximum Collector-Emitter Voltage |Vce| | 12 V | |
| Maximum Collector Current |Ic max| | 0.05 A | |
| Max. Operating Junction Temperature (Tj) | 175 °C | |
| Transition Frequency (ft): | 400 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 25 | |
| SKU | 18457 | |