XB112

SKU: XB112

XB112 Transistor Germanium PNP CASE: TO1 MAKE: AEI Semiconductors

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO1
Manufacturer	AEI Semiconductors
Vbr CBO	35
Max. PD (W)	150m
Derate (Amb) (W/°C)	3.0m
hfe	30
Icbo Max. @Vcb Max. (A)	10u
Polarity	PNP
@VCE (test) (V)	5.0i
Oper. Temp (°C) Max.	60
@Ic (A)	1.0m
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.09 W
Maximum Collector-Base Voltage \|Vcb\|	16 V
Maximum Collector-Emitter Voltage \|Vce\|	12 V
Maximum Emitter-Base Voltage \|Veb\|	12 V
Max. Operating Junction Temperature (Tj)	55 °C
Forward Current Transfer Ratio (hFE), MIN	20
SKU	533533

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