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XB113
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XB113

SKU: XB113
XB113 Transistor Germanium PNP CASE: TO1 MAKE: AEI Semiconductors
Product specifications
Type Transistor Germanium PNP
Case TO1
Manufacturer AEI Semiconductors
Vbr CBO 35
Max. PD (W) 150m
Derate (Amb) (W/°C) 3.0m
hfe 66
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
@VCE (test) (V) 5.0i
Oper. Temp (°C) Max. 75
@Ic (A) 1.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.09 W
Maximum Collector-Base Voltage |Vcb| 16 V
Maximum Collector-Emitter Voltage |Vce| 12 V
Maximum Emitter-Base Voltage |Veb| 12 V
Max. Operating Junction Temperature (Tj) 55 °C
Forward Current Transfer Ratio (hFE), MIN 45
SKU 533534
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