| Type | Transistor Silicon PNP | |
| Case | TO92S | |
| Manufacturer | Microsemi Corporation | |
| Vbr CBO | 120 | |
| Vbr CEO | 120 | |
| Max. PD (W) | 300m | |
| C(ob) (F) | 10p | |
| Derate (Amb) (W/°C) | 2.0m | |
| hfe | 30 | |
| Ic Max. (A) | 100m | |
| Icbo Max. @Vcb Max. (A) | .50u | |
| Polarity | PNP | |
| Trans. Freq (Hz) Min. | 80M | |
| @VCE (test) (V) | 1.0 | |
| Oper. Temp (°C) Max. | 175 | |
| @Ic (A) | 2.0m | |
| Pinout Equivalence Number | 3-12 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 0.5 W | |
| Maximum Collector-Base Voltage |Vcb| | 100 V | |
| Maximum Emitter-Base Voltage |Veb| | 5 V | |
| Maximum Collector Current |Ic max| | 0.1 A | |
| Max. Operating Junction Temperature (Tj) | 175 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 30 | |
| SKU | 116939 | |