Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
Diodes Inc |
Case |
TO92 |
Vbr CBO |
35 |
Vbr CEO |
25 |
Max. PD (W) |
1.0 |
t(f) Max. (S) |
300n+ |
Max. hFE |
300 |
Min hFE |
100 |
Ic Max. (A) |
2.0 |
@Ic (test) (A) |
1.0 |
Icbo Max. @Vcb Max. (A) |
100n |
Polarity |
NPN |
Tr Max. (s) |
55n- |
Derate Above 25°C |
5.7m |
Trans. Freq (Hz) Min. |
150M |
Oper. Temp (°C) Max. |
150 |
@VCE (V) |
2.0 |
Pinout Equivalence Number |
3-12 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
1 W |
Maximum Collector-Base Voltage |Vcb| |
35 V |
Maximum Collector-Emitter Voltage |Vce| |
25 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
2 A |
Max. Operating Junction Temperature (Tj) |
200 °C |
Collector Capacitance (Cc) |
50 pF |
Transition Frequency (ft): |
150 MHz |
Forward Current Transfer Ratio (hFE), MIN |
100 |
SKU |
86453 |