Weight |
0.01 kg
|
Type |
Transistor Silicon PNP |
Manufacturer |
Diodes Inc |
Case |
TO92 |
Vbr CBO |
120 |
Vbr CEO |
100 |
Max. PD (W) |
1.0 |
Derate (Amb) (W/°C) |
5.7m |
Max. hFE |
300 |
Min hFE |
100 |
Ic Max. (A) |
2.0 |
@Ic (test) (A) |
0.5 |
Icbo Max. @Vcb Max. (A) |
100n |
Polarity |
PNP |
Tr Max. (s) |
40n- |
Trans. Freq (Hz) Min. |
100M |
Oper. Temp (°C) Max. |
175 |
@VCE (V) |
2 |
Pinout Equivalence Number |
3-12 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
1 W |
Maximum Collector-Base Voltage |Vcb| |
120 V |
Maximum Collector-Emitter Voltage |Vce| |
100 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
2 A |
Max. Operating Junction Temperature (Tj) |
200 °C |
Collector Capacitance (Cc) |
30 pF |
Transition Frequency (ft): |
100 MHz |
Forward Current Transfer Ratio (hFE), MIN |
25 |
SKU |
86456 |