The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N2035
View detailed images (12)

2N2035

SKU: 2N2035
2N2035 Transistor Silicon NPN CASE: TO5 MAKE: USA Make
Product specifications
Type Transistor Silicon NPN
Case TO5
Manufacturer USA Make
Vbr CBO 80
Vbr CEO 60
Max. PD (W) 14
t(f) Max. (S) 1.5u+
Max. hFE 60
Min hFE 20
Ic Max. (A) 3.0
@Ic (test) (A) 1.5
Icbo Max. @Vcb Max. (A) 150u
Polarity NPN
Tr Max. (s) 1.0u
R(sat) (Û) 300m
Derate Above 25°C 143m
Trans. Freq (Hz) Min. 1.0M
Oper. Temp (°C) Max. 175#
@VCE (V) 4.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 312747
Back