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2N1009
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2N1009

SKU: 2N1009
2N1009 Transistor Germanium PNP CASE: TO5 MAKE: Bendix Corporation
Product specifications
Type Transistor Germanium PNP
Case TO5
Manufacturer Bendix Corporation
Vbr CBO 35
Vbr CEO 35
Max. PD (W) 400m#
Derate (Amb) (W/°C) 6.6m
hfe 40
Ic Max. (A) 300m
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Trans. Freq (Hz) Min. 7.5k
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 85
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Collector Current |Ic max| 0.02 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 0.4 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 312628
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