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2N1010
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2N1010

SKU: 2N1010
2N1010 Transistor Germanium NPN CASE: TO1 MAKE: USA Make
Product specifications
Type Transistor Germanium NPN
Case TO1
Manufacturer USA Make
Vbr CBO 10
Vbr CEO 10
Max. PD (W) 20m
Derate (Amb) (W/°C) 667u
hfe 35
Ic Max. (A) 2.0m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Trans. Freq (Hz) Min. 2.0M
@VCE (test) (V) 3.0
Oper. Temp (°C) Max. 55
@Ic (A) 300u
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.02 W
Maximum Collector-Base Voltage |Vcb| 10 V
Maximum Collector-Emitter Voltage |Vce| 10 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.002 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 35
SKU 777369
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