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2N1014
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2N1014

SKU: 2N1014
2N1014 Transistor Germanium PNP CASE: TO3 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer USA Make
Vbr CBO 100
Vbr CEO 65
Max. PD (W) 50
t(f) Max. (S) 65u
Max. hFE 50
Min hFE 26
Ic Max. (A) 5.0
@Ic (test) (A) 4.0
Icbo Max. @Vcb Max. (A) 500u
Polarity PNP
Tr Max. (s) 90u
Derate Above 25°C 666m
Oper. Temp (°C) Max. 100#
@VCE (V) 1.5
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Collector Current |Ic max| 12 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 777365
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