The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N1123
View detailed images (1)

2N1123

SKU: 2N1123
2N1123 Transistor Germanium PNP CASE: MT60 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case MT60
Manufacturer USA Make
Vbr CBO 45
Vbr CEO 40
Max. PD (W) 750m
C(ob) (F) 20p
Derate (Amb) (W/°C) 10m
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 25u
Polarity PNP
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 100
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.75 W
Maximum Collector-Base Voltage |Vcb| 45 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 45 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 100 °C
Collector Capacitance (Cc) 15 pF
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 605835
Back