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2N1131L
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2N1131L

SKU: 2N1131L
2N1131L Transistor Silicon PNP CASE: TO5 MAKE: Raytheon
Datasheet
2N1131L Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO5
Manufacturer Raytheon
Vbr CBO 50
Vbr CEO 35
Max. PD (W) 600m
C(ob) (F) 45p
Derate (Amb) (W/°C) 4.0m
hfe 15
Ic Max. (A) 600m
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
Trans. Freq (Hz) Min. 50M
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 175
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.6 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.6 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 4.5 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 777237
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