The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N1157
View detailed images (1)

2N1157

SKU: 2N1157
2N1157 Transistor Germanium PNP CASE: TO61 MAKE: USA Make
Product specifications
Equivalent 2N1157A
Type Transistor Germanium PNP
Case TO61
Manufacturer USA Make
Vbr CBO 60
Vbr CEO 45
Max. PD (W) 187
Max. hFE 84
Min hFE 38
Ic Max. (A) 40
@Ic (test) (A) 10
Icbo Max. @Vcb Max. (A) 7.0
Polarity PNP
Derate Above 25°C 2.5
Trans. Freq (Hz) Min. 75k
Oper. Temp (°C) Max. 100
@VCE (V) 2.0
Pinout Equivalence Number 3-17
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 187 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 28 V
Maximum Collector Current |Ic max| 40 A
Max. Operating Junction Temperature (Tj) 100 °C
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 777206
Back