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2N1157A
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2N1157A

SKU: 2N1157A
2N1157A Transistor Germanium PNP CASE: TO61 MAKE: USA Make
Product specifications
Equivalent 2N1157
Type Transistor Germanium PNP
Case TO61
Manufacturer USA Make
Vbr CBO 80
Vbr CEO 50
Max. PD (W) 187
Max. hFE 84
Min hFE 38
Ic Max. (A) 40
@Ic (test) (A) 10
Icbo Max. @Vcb Max. (A) 20m
Polarity PNP
Derate Above 25°C 2.5
Trans. Freq (Hz) Min. 75k
Oper. Temp (°C) Max. 100
@VCE (V) 2.0
Pinout Equivalence Number 3-17
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 187 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 28 V
Maximum Collector Current |Ic max| 40 A
Max. Operating Junction Temperature (Tj) 100 °C
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 777205
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