2N1157A

SKU: 2N1157A

2N1157A Transistor Germanium PNP CASE: TO61 MAKE: USA Make

Product specifications

Weight	0.01 kg
Equivalent	2N1157
Type	Transistor Germanium PNP
Case	TO61
Manufacturer	USA Make
Vbr CBO	80
Vbr CEO	50
Max. PD (W)	187
Max. hFE	84
Min hFE	38
Ic Max. (A)	40
@Ic (test) (A)	10
Icbo Max. @Vcb Max. (A)	20m
Polarity	PNP
Derate Above 25°C	2.5
Trans. Freq (Hz) Min.	75k
Oper. Temp (°C) Max.	100
@VCE (V)	2.0
Pinout Equivalence Number	3-17
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	187 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	28 V
Maximum Collector Current \|Ic max\|	40 A
Max. Operating Junction Temperature (Tj)	100 °C
Transition Frequency (ft):	0.1 MHz
Forward Current Transfer Ratio (hFE), MIN	10
SKU	777205

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