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2N1160
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2N1160

SKU: 2N1160
2N1160 Transistor Germanium PNP CASE: TO3 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer USA Make
Vbr CBO 80
Max. PD (W) 20
t(f) Max. (S) 10u
Max. hFE 50
Min hFE 20
Ic Max. (A) 7.0
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 8.0m
Polarity PNP
Tr Max. (s) 10u
Derate Above 25°C 833m
Trans. Freq (Hz) Min. 10k-
Oper. Temp (°C) Max. 95
@VCE (V) 2.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 90 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 20 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 100 °C
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 777201
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