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2N1197
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2N1197

SKU: 2N1197
2N1197 Transistor Silicon PNP CASE: TO5 MAKE: USA Make
Product specifications
Type Transistor Silicon PNP
Case TO5
Manufacturer USA Make
Vbr CBO 70
Vbr CEO 70
Max. PD (W) 350m
C(ob) (F) 4.0p
Derate (Amb) (W/°C) 2.0m
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 250n
Polarity PNP
Oper. Temp (°C) Max. 200
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.35 W
Maximum Collector-Base Voltage |Vcb| 70 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.015 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 5 pF
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 5
SKU 777170
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