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2N1201
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2N1201

SKU: 2N1201
2N1201 Transistor Silicon NPN CASE: TO9 MAKE: Philips
Product specifications
Type Transistor Silicon NPN
Case TO5
Manufacturer Philips
Vbr CBO 20
Vbr CEO 15
Max. PD (W) 100m
C(ob) (F) 3.5p
Derate (Amb) (W/°C) 769u
hfe 9.0
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 700n
Polarity NPN
@VCE (test) (V) 10
Oper. Temp (°C) Max. 150
@Ic (A) 2.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 14 V
Maximum Emitter-Base Voltage |Veb| 1 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3.5 pF
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 7
SKU 561487
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