The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N1262
View detailed images (1)

2N1262

SKU: 2N1262
2N1262 Transistor Germanium PNP CASE: MT36 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case MT36
Manufacturer USA Make
Vbr CBO 80
Vbr CEO 45
Max. PD (W) 10
Max. hFE 75
Min hFE 30
Ic Max. (A) 3.5
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 2.0m
Polarity PNP
Trans. Freq (Hz) Min. 200k
Oper. Temp (°C) Max. 95
@VCE (V) 2.0
Pinout Equivalence Number 3-17
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 34 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 28 V
Maximum Collector Current |Ic max| 3.5 A
Max. Operating Junction Temperature (Tj) 95 °C
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN 45
SKU 777117
Back