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2N1622
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2N1622

SKU: 2N1622
2N1622 Transistor Germanium NPN CASE: TO5 MAKE: USA Make
Product specifications
Type Transistor Germanium NPN
Case TO5
Manufacturer USA Make
Vbr CBO 90
Vbr CEO 90
Max. PD (W) 120m
Derate (Amb) (W/°C) 2.0m
Icbo Max. @Vcb Max. (A) 7.0u
Polarity NPN
Oper. Temp (°C) Max. 85
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.12 W
Maximum Collector-Base Voltage |Vcb| 90 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 20 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 75 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 776794
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