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2N1730
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2N1730

SKU: 2N1730
2N1730 Transistor Germanium NPN CASE: TO5 MAKE: USA Make
Product specifications
Type Transistor Germanium NPN
Case TO5
Manufacturer USA Make
Vbr CBO 25
Vbr CEO 15
Max. PD (W) 150m
C(ob) (F) 20p
Derate (Amb) (W/°C) 2.5m
hfe 30
Ic Max. (A) 300m
Icbo Max. @Vcb Max. (A) 6.0u
Polarity NPN
@VCE (test) (V) .30
Oper. Temp (°C) Max. 100
@Ic (A) 100m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 75 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 776700
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