The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N1897
View detailed images (1)

2N1897

SKU: 2N1897
2N1897 Transistor Silicon NPN CASE: TO61 MAKE: Raytheon Semiconductor
Product specifications
Type Transistor Silicon NPN
Case TO61
Manufacturer Raytheon Semiconductor
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 85
t(f) Max. (S) 1.4u-
Max. hFE 135
Min hFE 45
Ic Max. (A) 2.0
@Ic (test) (A) 1.0
Polarity NPN
Tr Max. (s) 110n-
R(sat) (Û) 4.0
Derate Above 25°C 485m
Trans. Freq (Hz) Min. 25M
Oper. Temp (°C) Max. 175
@VCE (V) 15
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 85 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 25 MHz
Forward Current Transfer Ratio (hFE), MIN 45
SKU 776545
Back