The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N1955
View detailed images (12)

2N1955

SKU: 2N1955
2N1955 Transistor Germanium PNP CASE: TO5 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO5
Manufacturer USA Make
Vbr CBO 60
Vbr CEO 18
Max. PD (W) 200m
Derate (Amb) (W/°C) 2.8m
hfe 50
Ic Max. (A) 200m
Icbo Max. @Vcb Max. (A) 20u
Polarity PNP
@VCE (test) (V) .50
Oper. Temp (°C) Max. 100
@Ic (A) 20m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 18 V
Maximum Collector Current |Ic max| 0.2 A
Max. Operating Junction Temperature (Tj) 100 °C
Forward Current Transfer Ratio (hFE), MIN 50
SKU 776498
Back