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2N2060L
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2N2060L

SKU: 2N2060L
2N2060L Transistor Silicon NPN CASE: TO78 MAKE: Raytheon
Datasheet
2N2060L Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO78
Manufacturer Raytheon
Vbr CBO 100
Vbr CEO 60
Max. PD (W) 500m
Derate (Amb) (W/°C) 3.0m
hfe 3
Ic Max. (A) 500m
Polarity NPN
@VCE (test) (V) 10
Oper. Temp (°C) Max. 200
@Ic (A) 50m
Pinout Equivalence Number 7-16
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 2.12 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 15 pF
Forward Current Transfer Ratio (hFE), MIN 25
SKU 776411
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