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2N2212
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2N2212

SKU: 2N2212
2N2212 Transistor Germanium PNP CASE: TO3 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Generic
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 60
Max. hFE 120
Min hFE 50
Ic Max. (A) 10
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 2.0m
Polarity PNP
R(sat) (Û) 200m
Derate Above 25°C 1.2
Trans. Freq (Hz) Min. 450k
Oper. Temp (°C) Max. 125
@VCE (V) 2.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 102 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 1 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 100 °C
Transition Frequency (ft): 0.45 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 605933
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