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2N2281
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2N2281

SKU: 2N2281
2N2281 Transistor Silicon PNP CASE: MB13 MAKE: USA Make
Product specifications
Type Transistor Silicon PNP
Case MB13
Manufacturer USA Make
Vbr CBO 10
Vbr CEO 6.0
Max. PD (W) 150m
C(ob) (F) 10p
Derate (Amb) (W/°C) 1.3m
hfe 10
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 3.0n
Polarity PNP
@VCE (test) (V) .50
Oper. Temp (°C) Max. 150
@Ic (A) 5.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 10 V
Maximum Collector-Emitter Voltage |Vce| 6 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 140 °C
Collector Capacitance (Cc) 10 pF
Transition Frequency (ft): 16 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 776113
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