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2N2296
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2N2296

SKU: 2N2296
2N2296 Transistor Germanium PNP CASE: TO3 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer USA Make
Vbr CBO 120
Vbr CEO 70
Max. PD (W) 60
t(f) Max. (S) 10u+
Max. hFE 120
Min hFE 50
Ic Max. (A) 10
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 20m
Polarity PNP
Tr Max. (s) 10u
R(sat) (Û) 200m
Derate Above 25°C 833m
Oper. Temp (°C) Max. 125#
@VCE (V) 2.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 60 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 70 V
Maximum Emitter-Base Voltage |Veb| 1 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 100 °C
Transition Frequency (ft): 0.45 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 368177
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