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2N2444
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2N2444

SKU: 2N2444
2N2444 Transistor Germanium PNP CASE: TO3 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer USA Make
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 85
Max. hFE 120
Min hFE 90
Ic Max. (A) 10
@Ic (test) (A) 3.0
Icbo Max. @Vcb Max. (A) 20m
Polarity PNP
R(sat) (Û) 200m
Derate Above 25°C 1.0
Trans. Freq (Hz) Min. 4.5M
Oper. Temp (°C) Max. 125#
@VCE (V) 2.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 85 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 1 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 100 °C
Transition Frequency (ft): 4.5 MHz
Forward Current Transfer Ratio (hFE), MIN 90
SKU 775936
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