The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N266
View detailed images (1)

2N266

SKU: 2N266
2N266 Transistor Germanium PNP CASE: R32 MAKE: General Electric
Product specifications
Type Transistor Germanium PNP
Case R32
Manufacturer General Electric
Vbr CBO 18
Vbr CEO 18
Max. PD (W) 75m
C(ob) (F) 35p
Derate (Amb) (W/°C) 1.3m
Ic Max. (A) 200m
Icbo Max. @Vcb Max. (A) 16u
Polarity PNP
Trans. Freq (Hz) Min. 800k
Oper. Temp (°C) Max. 60
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.075 W
Maximum Collector-Base Voltage |Vcb| 18 V
Maximum Collector-Emitter Voltage |Vce| 18 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.2 A
Max. Operating Junction Temperature (Tj) 75 °C
Collector Capacitance (Cc) 35 pF
Transition Frequency (ft): 0.4 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 775740
Back