2N307

SKU: 2N307

2N307 Transistor Germanium PNP CASE: TO3 MAKE: Generic

Product specifications

Weight	0.01 kg
Equivalent	2N307B
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	Generic
Vbr CBO	35
Vbr CEO	35
Max. PD (W)	50
Max. hFE	35-
Min hFE	20
Ic Max. (A)	1.0
@Ic (test) (A)	200m
Icbo Max. @Vcb Max. (A)	15m
Polarity	PNP
R(sat) (Û)	800m
Derate Above 25°C	200m
Trans. Freq (Hz) Min.	3.0k
Oper. Temp (°C) Max.	75
@VCE (V)	1.5
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	50 W
Maximum Collector-Base Voltage \|Vcb\|	35 V
Maximum Collector-Emitter Voltage \|Vce\|	35 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	75 °C
Transition Frequency (ft):	0.1 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	775144

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