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2N315B
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2N315B

SKU: 2N315B
2N315B Transistor Germanium PNP CASE: TO5 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO5
Manufacturer USA Make
Vbr CBO 30
Vbr CEO 20
Max. PD (W) 150m
Derate (Amb) (W/°C) 2.0m
hfe 20
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 2.0u
Polarity PNP
@VCE (test) (V) .20
Oper. Temp (°C) Max. 100
@Ic (A) 100m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Emitter-Base Voltage |Veb| 20 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 85 °C
Collector Capacitance (Cc) 25 pF
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 775059
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