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2N316
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2N316

SKU: 2N316
2N316 Transistor Germanium PNP CASE: TO5 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO5
Manufacturer USA Make
Vbr CBO 20
Vbr CEO 10
Max. PD (W) 100m
C(ob) (F) 14p
Derate (Amb) (W/°C) 2.0m
hfe 30
Ic Max. (A) 200m
Icbo Max. @Vcb Max. (A) 2.0u
Polarity PNP
Trans. Freq (Hz) Min. 12M
@VCE (test) (V) .20
Oper. Temp (°C) Max. 100
@Ic (A) 200m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.1 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 10 V
Maximum Emitter-Base Voltage |Veb| 20 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 85 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 775058
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