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2N317A
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2N317A

SKU: 2N317A
2N317A Transistor Germanium PNP CASE: TO5 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case TO5
Manufacturer Generic
Vbr CBO 25
Vbr CEO 10
Max. PD (W) 150m
Derate (Amb) (W/°C) 2.0m
hfe 20
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 2.0u
Polarity PNP
@VCE (test) (V) .25
Oper. Temp (°C) Max. 100
@Ic (A) 400m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 6 V
Maximum Emitter-Base Voltage |Veb| 20 V
Maximum Collector Current |Ic max| 0.4 A
Max. Operating Junction Temperature (Tj) 100 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 606022
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