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2N327
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2N327

SKU: 2N327
2N327 Transistor Silicon PNP CASE: TO5 MAKE: Raytheon Semiconductor
Product specifications
Type Transistor Silicon PNP
Case TO5
Manufacturer Raytheon Semiconductor
Vbr CEO 40
Max. PD (W) 337m
C(ob) (F) 30p
Derate (Amb) (W/°C) 2.5m
hfe 14
Ic Max. (A) 50m
Polarity PNP
Trans. Freq (Hz) Min. .30M
@VCE (test) (V) 6.0i
Oper. Temp (°C) Max. 150
@Ic (A) 1.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.33 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 160 °C
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 116229
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