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2N3637S
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2N3637S

SKU: 2N3637S
2N3637S Transistor Silicon PNP CASE: TO5 MAKE: Microsemi Corporation
Product specifications
Type Transistor Silicon PNP
Case TO5
Manufacturer Microsemi Corporation
Vbr CBO 175
Vbr CEO 175
Max. PD (W) 1.0
Derate (Amb) (W/°C) 28m
t(f) Max. (S) 600n+
Max. hFE 300
Min hFE 100
Ic Max. (A) 1.0
@Ic (test) (A) 50m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Tr Max. (s) 400n
R(sat) (Û) 40
Trans. Freq (Hz) Min. 200M
Oper. Temp (°C) Max. 175
@VCE (V) 10
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 175 V
Maximum Collector-Emitter Voltage |Vce| 175 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 10 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 774529
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